SPB18P06PG Datasheet, PDF (1/8 Pages) Infineon Technologies AG – SIPMOS Power-Transistor

SIPMOS^® Power-Transistor
Features
• P-Channel
• Enhancement mode
• Avalanche rated
• dv /dt rated
• 175°C operating temperature
• Pb-free lead plating; RoHS compliant
Product Summary
V _DS
R _DS(on),max
I_D
SPB18P06P G
-60 V
0.13 Ω
-18.6 A
PG-TO263-3
Type
Package
SPB18P06PG PG-TO263-3
Tape and reel information
1000 pcs / reel
Maximum ratings, at T _j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
Pulsed drain current
I_D
I _D,pulse
T _A=25 °C
T _A=100 °C
T _A=25 °C
Marking Lead free
18P06P Yes
Packing
Non dry
Value
Unit
steady state
-18.7
A
-13.2
-74.8
Avalanche energy, single pulse
E _AS
I _D=18.7 A, R _GS=25 Ω
151
mJ
Avalanche energy, periodic limited by
T_jmax
E _AR
Reverse diode dv /dt
dv /dt
I _D=18.7 A, V _DS=48 V,
di /dt =-200 A/µs,
T _j,max=175 °C
Gate source voltage
V _GS
Power dissipation
P _tot
T _A=25 °C
Operating and storage temperature T _j, T _stg
ESD class
Soldering temperature
IEC climatic category; DIN IEC 68-1
8
-6
±20
81.1
"-55 ... +175"
260 °C
55/175/56
kV/µs
V
W
°C
Rev 1.4
page 1
2008-07-09