SPB16N50C3_05 Datasheet, PDF (1/12 Pages) Infineon Technologies AG – Cool MOS Power Transistor

Cool MOS™ Power Transistor
Feature
• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• Ultra low effective capacitances
• Improved transconductance
SPB16N50C3
V_DS @ T_jmax 560 V
R_DS(on)
0.28 Ω
I_D
16 A
PG-TO263
Type
SPB16N50C3
Package
PG-TO263
Ordering Code
Q67040-S4642
Marking
16N50C3
Maximum Ratings
Parameter
Symbol
Continuous drain current
T_C = 25 °C
T_C = 100 °C
Pulsed drain current, t_p limited by T_jmax
Avalanche energy, single pulse
I_D=8, V_DD=50V
Avalanche energy, repetitive t_AR limited by T_jmax²⁾
I_D=16A, V_DD=50V
Avalanche current, repetitive t_AR limited by T_jmax
Gate source voltage
Gate source voltage AC (f >1Hz)
Power dissipation, T_C = 25°C
Operating and storage temperature
Reverse diode dv/dt ⁶⁾
I_D
I_{D puls}
E_AS
E_AR
I_AR
V_GS
V_GS
P_tot
T_j , T_stg
dv/dt
Value
SPB
16
10
48
460
0.64
16
±20
±30
160
-55...+150
15
Unit
A
A
mJ
A
V
W
°C
V/ns
Rev. 2.4
Page 1
2005-11-07