SPB160N04S2L-03 Datasheet, PDF (1/8 Pages) Infineon Technologies AG – OptiMOS Power-Transistor

OptiMOS^® Power-Transistor
Feature
• N-Channel
• Enhancement mode
• Logic Level
• High Current Rating
• Low On-Resistance R_DS(on)
• 175°C operating temperature
• Avalanche rated
• dv/dt rated
SPB160N04S2L-03
Product Summary
V_DS
40 V
R_DS(on) max. SMD version 2.7 mΩ
I_D
160 A
P- TO263 -7-3
Type
Package
Ordering Code Marking
SPB160N04S2L-03 P- TO263 -7-3 Q67060-S6138 P2N04L03
Maximum Ratings, at T_j = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current¹⁾
I_D
T_C=25°C
T_C=100°C
Pulsed drain current
T_C=25°C
I_{D puls}
Avalanche energy, single pulse
E_AS
I_D=80A, V_DD=25V, R_GS=25Ω
Repetitive avalanche energy, limited by T_jmax²⁾
E_AR
Reverse diode dv/dt
dv/dt
I_S=160A, V_DS=32V, di/dt=200A/µs, T_jmax=175°C
Gate source voltage
V_GS
Power dissipation
P_tot
T_C=25°C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
T_j , T_stg
Value
160
160
640
810
30
6
±20
300
-55... +175
55/175/56
Unit
A
mJ
kV/µs
V
W
°C
Page 1
2003-05-22