SPB12N50C3_05 Datasheet, PDF (1/12 Pages) Infineon Technologies AG – New revolutionary high voltage technology Worldwide best RDS(on) in TO 220 Ultra low gate charge

Cool MOS™ Power Transistor
Feature
• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• Ultra low effective capacitances
• Improved transconductance
SPB12N50C3
V_DS @ T_jmax 560 V
R_DS(on)
0.38 Ω
I_D
11.6 A
PG-TO263
-
Type
SPB12N50C3
Package
PG-TO263
Ordering Code
Q67040-S4641
Marking
12N50C3
Maximum Ratings
Parameter
Symbol
Continuous drain current
T_C = 25 °C
T_C = 100 °C
Pulsed drain current, t_p limited by T_jmax
Avalanche energy, single pulse
I_D=5.5A, V_DD=50V
Avalanche energy, repetitive t_AR limited by T_jmax²⁾
I_D=11.6A, V_DD=50V
Avalanche current, repetitive t_AR limited by T_jmax
Gate source voltage
Gate source voltage AC (f >1Hz)
Power dissipation, T_C = 25°C
Operating and storage temperature
Reverse diode dv/dt ⁷⁾
I_D
I_{D puls}
E_AS
E_AR
I_AR
V_GS
V_GS
P_tot
T_j , T_stg
dv/dt
Value
SPB
11.6
7
34.8
340
0.6
11.6
±20
±30
125
-55...+150
15
Unit
A
A
mJ
A
V
W
°C
V/ns
Rev. 2.4
Page 1
2005-11-07