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SPB11N60C3_07 Datasheet, PDF (1/13 Pages) Infineon Technologies AG – Cool MOS Power Transistor | |||
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Cool MOS⢠Power Transistor
Feature
⢠New revolutionary high voltage technology
⢠Ultra low gate charge
⢠Periodic avalanche rated
⢠Extreme dv/dt rated
⢠High peak current capability
⢠Improved transconductance
SPB11N60C3
VDS @ Tjmax 650
V
RDS(on)
0.38 â¦
ID
11 A
PG-TO263
Type
SPB11N60C3
Package
PG-TO263
Ordering Code
Q67040-S4396
Marking
11N60C3
Maximum Ratings
Parameter
Symbol
Continuous drain current
TC = 25 °C
TC = 100 °C
Pulsed drain current, tp limited by Tjmax
Avalanche energy, single pulse
ID=5.5A, VDD=50V
Avalanche energy, repetitive tAR limited by Tjmax2)
ID=11A, VDD=50V
Avalanche current, repetitive tAR limited by Tjmax
Gate source voltage static
Gate source voltage AC (f >1Hz)
Power dissipation, TC = 25°C
Operating and storage temperature
Reverse diode dv/dt 7)
ID
ID puls
EAS
EAR
IAR
VGS
VGS
Ptot
Tj , Tstg
dv/dt
Value
SPB
11
7
33
340
0.6
11
±20
±30
125
-55...+150
15
Unit
A
A
mJ
A
V
W
°C
V/ns
Rev. 2.6
Page 1
2007-12-14
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