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| SPB07N60S5_05 Datasheet, PDF (1/11 Pages) Infineon Technologies AG – Cool MOS Power Transistor | |||
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Cool MOS⢠Power Transistor
Feature
⢠New revolutionary high voltage technology
⢠Ultra low gate charge
⢠Periodic avalanche rated
⢠Extreme dv/dt rated
⢠Ultra low effective capacitances
⢠Improved transconductance
SPB07N60S5
VDS
RDS(on)
ID
600 V
0.6 â¦
7.3 A
PG-TO263
Type
SPB07N60S5
Package
PG-TO263
Ordering Code
Q67040-S4185
Marking
07N60S5
Maximum Ratings
Parameter
Symbol
Continuous drain current
ID
TC = 25 °C
TC = 100 °C
Pulsed drain current, tp limited by Tjmax
ID puls
Avalanche energy, single pulse
EAS
ID = - A, VDD = 50 V
Avalanche energy, repetitive tAR limited by Tjmax1) EAR
ID = 7.3 A, VDD = 50 V
Avalanche current, repetitive tAR limited by Tjmax IAR
Gate source voltage
VGS
Gate source voltage AC (f >1Hz)
VGS
Power dissipation, TC = 25°C
Ptot
Operating and storage temperature
Tj , Tstg
Value
Unit
A
7.3
4.6
14.6
230
mJ
0.5
7.3
A
±20
V
±30
83
W
-55... +150
°C
Rev. 2.3
Page 1
2005-07-21
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