SPB07N60C3_05 Datasheet, PDF (1/13 Pages) Infineon Technologies AG – New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated

Cool MOS™ Power Transistor
Feature
• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• High peak current capability
• Improved transconductance
SPB07N60C3
V_DS @ T_jmax 650 V
R_DS(on)
0.6 Ω
I_D
7.3 A
PG-TO263
Type
SPB07N60C3
Package
PG-TO263
Ordering Code
Q67040-S4394
Marking
07N60C3
Maximum Ratings
Parameter
Symbol
Continuous drain current
T_C = 25 °C
T_C = 100 °C
Pulsed drain current, t_p limited by T_jmax
Avalanche energy, single pulse
I_D=5.5A, V_DD=50V
Avalanche energy, repetitive t_AR limited by T_jmax²⁾
I_D=7.3A, V_DD=50V
Avalanche current, repetitive t_AR limited by T_jmax
Gate source voltage static
Gate source voltage AC (f >1Hz)
Power dissipation, T_C = 25°C
Operating and storage temperature
Reverse diode dv/dt ⁶⁾
I_D
I_{D puls}
E_AS
E_AR
I_AR
V_GS
V_GS
P_tot
T_j , T_stg
dv/dt
Value
SPB
7.3
4.6
21.9
230
0.5
7.3
±20
±30
83
-55...+150
15
Unit
A
A
mJ
A
V
W
°C
V/ns
Rev. 2.5
Page 1
2005-09-14