SPB03N60C3_07 Datasheet, PDF (1/13 Pages) Infineon Technologies AG – Cool MOS Power Transistor

&RRO026Π3RZHU7UDQVLVWRU
)HDWXUH
• 1HZUHYROXWLRQDU\KLJKYROWDJHWHFKQRORJ\
•8OWUDORZJDWHFKDUJH
• 3HULRGLFDYDODQFKHUDWHG
•([WUHPHGYGWUDWHG
• +LJKSHDNFXUUHQWFDSDELOLW\
• ,PSURYHGWUDQVFRQGXFWDQFH
63%1&
V_DS#T_jmax 
9
5_'6RQ
 Ω
,_'
 $
3G72
7\SH
63%1&
3DFNDJH
3G72
2UGHULQJ&RGH
46
0DUNLQJ
1&
0D[LPXP5DWLQJV
3DUDPHWHU
6\PERO
&RQWLQXRXVGUDLQFXUUHQW
T_C ƒ&
T_C ƒ&
3XOVHGGUDLQFXUUHQWt_pOLPLWHGE\T_jmax
$YDODQFKHHQHUJ\VLQJOHSXOVH
,_' $V_DD 9
$YDODQFKHHQHUJ\UHSHWLWLYHW_$5OLPLWHGE\T_jmax^
,_' $V_DD 9
$YDODQFKHFXUUHQWUHSHWLWLYHW_$5OLPLWHGE\T_jmax
Gate source voltage static
*DWHVRXUFHYROWDJH$&I!+]
Power dissipation, T_C = 25°C
2SHUDWLQJDQGVWRUDJHWHPSHUDWXUH
Reverse diode dv/dt ⁷⁾
,_'
,_'SXOV
(_$6
E_AR
,_$5
V_GS
V_GS
P_tot
7_M7_VWJ
dv/dt
9DOXH
63%







“
±


15
8QLW
$
$
P-
$
9
:
ƒ&
V/ns
Rev. 2.5
PDJH
72-14