SMBTA06U Datasheet, PDF (1/5 Pages) Infineon Technologies AG – NPN Silicon AF Transistor Array

NPN Silicon AF Transistor Array

High breakdown voltage

Low collector-emitter saturation voltage

Complementary type: SMBTA56U (PNP)

Two ( galvanic) internal isolated Transistors
with good matching in one package
SMBTA06U
4
5
6
3
2
1
VPW09197
C1
B2
E2
6
5
4
TR1
TR2
1
2
3
E1
B1
C2
EHA07178
Type
SMBTA06U
Marking
s1G
Pin Configuration
Package
1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 _SC74
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
DC collector current
Peak collector current
Base current
Peak base current
Total power dissipation, T_S = 115 °C
Junction temperature
Storage temperature
Thermal Resistance
Junction - soldering point¹⁾
Symbol
V_CEO
V_CBO
V_EBO
I_C
I_CM
I_B
I_BM
P_tot
T_j
T_stg
R_thJS
Value
Unit
80
V
80
4
500
mA
1
A
100
mA
200
330
mW
150
°C
-65 ... 150

105
K/W
1For _{calculation of RthJA please refer to Application Note Thermal Resistance}
1
Nov-30-2001