SMBT3904U Datasheet, PDF (1/8 Pages) Infineon Technologies AG – NPN Silicon Switching Transistor Array

SMBT3904U
NPN Silicon Switching Transistor Array

High DC current gain: 0.1mA to 100mA

Low collector-emitter saturation voltage

Two ( galvanic) internal isolated Transistors
with good matching in one package

Complementary type: SMBT3906U (PNP)
C1
B2
E2
6
5
4
4
5
6
3
2
1
VPW09197
TR2
TR1
Type
SMBT3904U
Marking
s1A
1
2
3
E1
B1
C2
EHA07178
Pin Configuration
Package
1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 _SC74
Maximum Ratings
Parameter
Symbol
Value
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
DC collector current
Total power dissipation, T_S = 105 °C
Junction temperature
Storage temperature
V_CEO
V_CBO
V_EBO
I_C
P_tot
T_j
T_stg
40
60
6
200
330
150
-65 ... 150
Thermal Resistance
Junction - soldering point¹⁾
R_thJS

135
1For _{calculation of RthJA please refer to Application Note Thermal Resistance}
Unit
V
mA
mW
°C
K/W
1
Nov-30-2001