SMBT2222AE6327HTSA1 Datasheet, PDF (1/8 Pages) Infineon Technologies AG – Low collector-emitter saturation voltage

NPN Silicon Switching Transistor
• Low collector-emitter saturation voltage
• Complementary type:
SMBT2907A / MMBT2907A (PNP)
• Pb-free (RoHS compliant) package
• Qualified according AEC Q101
SMBT2222A/MMBT2222A
3
2
1
Type
Marking
SMBT2222A/MMBT2222A s1P
Pin Configuration
1=B 2=E 3=C
Package
SOT23
Maximum Ratings
Parameter
Symbol
Value
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Total power dissipation-
T_S ≤ 77 °C
Junction temperature
V_CEO
40
V_CBO
75
V_EBO
6
I_C
600
P_tot
330
T_j
150
Storage temperature
T_stg
-65 ... 150
Thermal Resistance
Parameter
Junction - soldering point¹⁾
Symbol
R_thJS
Value
≤ 220
1_{For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation)}
Unit
V
mA
mW
°C
Unit
K/W
1
2011-08-19