SKB10N60A_07 Datasheet, PDF (1/13 Pages) Infineon Technologies AG – Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

SKB10N60A
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
C
• 75% lower E_off compared to previous generation
combined with low conduction losses
• Short circuit withstand time – 10 µs
• Designed for frequency inverters for washing machines,
fans, pumps and vacuum cleaners
G
E
• NPT-Technology for 600V applications offers:
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
- parallel switching capability
• Very soft, fast recovery anti-parallel EmCon diode
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC¹ for target applications
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
PG-TO-263-3-2
Type
SKB10N60A
V_CE
I_C
V_CE(sat)
T_j
Marking Package
600V 10A
2.3V
150°C K10N60 PG-TO-263-3-2
Maximum Ratings
Parameter
Collector-emitter voltage
DC collector current
T_C = 25°C
T_C = 100°C
Pulsed collector current, t_p limited by T_jmax
Turn off safe operating area
V_CE ≤ 600V, T_j ≤ 150°C
Diode forward current
T_C = 25°C
T_C = 100°C
Diode pulsed current, t_p limited by T_jmax
Gate-emitter voltage
Short circuit withstand time²
V_GE = 15V, V_CC ≤ 600V, T_j ≤ 150°C
Power dissipation
T_C = 25°C
Operating junction and storage temperature
Soldering temperature (reflow soldering, MSL1)
Symbol
V_CE
I_C
I_Cpuls
-
I_F
I_Fpuls
V_GE
t_SC
P_tot
T_j , T_stg
T_s
Value
Unit
600
V
A
20
10.6
40
40
21
10
42
±20
V
µs
10
W
92
-55...+150
°C
245
°C
1 _{J-STD-020 and JESD-022}
2 _{Allowed number of short circuits: <1000; time between short circuits: >1s.}
1
Rev. 2.2 Oct. 07