SIGC42T170R3GE Datasheet, PDF (1/5 Pages) Infineon Technologies AG – positive temperature coefficient

SIGC42T170R3GE
IGBT3 Power Chip
Features:
 1700V Trench + Field Stop technology
 low turn-off losses
 short tail current
 positive temperature coefficient
 easy paralleling
This chip is used for:
 power module
Applications:
 drives
C
G
E
Chip Type
V_CE
I_Cn
SIGC42T170R3GE 1700V 29A
Die Size
6.5 x 6.46 mm²
Package
sawn on foil
MECHANICAL PARAMETER
Raster size
Emitter pad size (incl. gate pad)
Gate pad size
Area total / active
Thickness
Wafer size
Max.possible chips per wafer
Passivation frontside
Pad metal
Backside metal
Die bond
Wire bond
Reject ink dot size
Recommended storage environment
6.5 x 6.46
4.27 x 4.27
1.18 x 1.09
mm²
42 / 28.7
190
µm
200
mm
641 pcs
Photoimide
3200 nm AlSiCu
Ni Ag –system
suitable for epoxy and soft solder die bonding
Electrically conductive glue or solder
Al, <500µm
 0.65mm ; max 1.2mm
Store in original container, in dry nitrogen,
< 6 month at an ambient temperature of 23°C
Edited by INFINEON Technologies, IFAG IPC TD VLS, L7751M, L7751T, L7751E, Rev 1.0, 27.06.2014