SIGC42T120CS2 Datasheet, PDF (1/4 Pages) Infineon Technologies AG – IGBT Chip in NPT-technology

SIGC42T120CS2
IGBT Chip in NPT-technology
FEATURES:
• 1200V NPT technology 175µm chip
• low turn-off losses
• short tail current
• positive temperature coefficient
• easy paralleling
This chip is used for:
• IGBT Modules
Applications:
• drives, SMPS, resonant
applications
C
G
E
Chip Type
SIGC42T120CS2
V_CE
I_Cn
Die Size
1200V 25A 6.59 x 6.49 mm²
Package Ordering Code
sawn on foil
Q67050-
A4338-A101
MECHANICAL PARAMETER:
Raster size
Emitter pad size
Gate pad size
Area total / active
Thickness
Wafer size
Flat position
Max.possible chips per wafer
Passivation frontside
Emitter metallization
Collector metallization
Die bond
Wire bond
Reject Ink Dot Size
Recommended Storage Environment
6.59 x 6.49
mm²
2 x (2.18 x 1.58)
1.06 x 0.65
42.8 / 33.5
180
µm
150
mm
90
grd
334 pcs
Photoimide
3200 nm Al Si 1%
1400 nm Ni Ag –system
suitable for epoxy and soft solder die bonding
electrically conductive glue or solder
Al, <500µm
∅ 0.65mm ; max 1.2mm
store in original container, in dry nitrogen,
< 6 month at an ambient temperature of 23°C
Edited by INFINEON Technologies AI PS DD HV3, L 7151-T, Edition 2, 03.09.2003