SIGC42T120CQ Datasheet, PDF (1/4 Pages) Infineon Technologies AG – IGBT Chip in Fieldstop -technology

SIGC42T120CQ
IGBT Chip in Fieldstop -technology
FEATURES:
• 1200V Fieldstop technology 120µm chip
• low turn-off losses
• short tail current
• positive temperature coefficient
This chip is used for:
• IGBT Modules
Applications:
• welding, SMPS, resonant
applications
C
G
E
Chip Type
V_CE
I_Cn
Die Size
Package Ordering Code
SIGC42T120CQ 1200V 25A 6.59 x 6.49 mm² sawn on foil SP0002-04966
MECHANICAL PARAMETER:
Raster size
Emitter pad size
Gate pad size
Area total / active
Thickness
Wafer size
Flat position
Max.possible chips per wafer
Passivation frontside
Emitter metallization
Collector metallization
Die bond
Wire bond
Reject Ink Dot Size
Recommended Storage Environment
6.59 x 6.49
mm²
2 x (2.18 x 1.58)
1.06 x 0.65
42.8 / 33.5
120
µm
150
mm
90
grd
332 pcs
Photoimide
3200 nm Al Si Cu
1400 nm Ni Ag –system
suitable for epoxy and soft solder die bonding
electrically conductive glue or solder
Al, <500µm
∅ 0.65mm ; max 1.2mm
store in original container, in dry nitrogen,
< 6 month at an ambient temperature of 23°C
Edited by INFINEON Technologies AIM PMD D CID CLS, L7151Q, Rev. 1.1, 20.12.2005