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SIGC39T60S Datasheet, PDF (1/4 Pages) Infineon Technologies AG – IGBT3 Chip 600V Trench & Field Stop technology positive temperature coefficient
IGBT3 Chip
SIGC39T60S
FEATURES:
• 600V Trench & Field Stop technology
• low VCE(sat)
• low turn-off losses
• short tail current
• positive temperature coefficient
• easy paralleling
This chip is used for:
• power module
• discrete components
Applications:
• drives
• white goods
• resonant applications
C
G
E
Chip Type
SIGC39T60S
VCE
ICn
Die Size
600V 75A 6.59 x 5.91 mm2
Package Ordering Code
sawn on foil
Q67050-
A4394-A101
MECHANICAL PARAMETER:
Raster size
Emitter pad size
Gate pad size
Area total / active
Thickness
Wafer size
Flat position
Max. possible chips per wafer
Passivation frontside
Emitter metallization
Collector metallization
Die bond
Wire bond
Reject ink dot size
Recommended storage environment
6.59 x 5.91
( 2.774 x 4.104 ) x 2
mm2
1.52 x 0.817
38.9 / 30
mm2
70
µm
150
mm
0
deg
348 pcs
Photoimide
3200 nm AlSiCu
1400 nm Ni Ag –system
suitable for epoxy and soft solder die bonding
electrically conductive glue or solder
Al, <500µm
∅ 0.65mm ; max 1.2mm
store in original container, in dry nitrogen,
< 6 month at an ambient temperature of 23°C
Edited by INFINEON Technologies AI PS DD CLS, L7571D, Edition 2, 26.01.2005