SIGC32T120R3E Datasheet, PDF (1/5 Pages) Infineon Technologies AG – positive temperature coefficient

SIGC32T120R3E
IGBT3 Power Chip
Features:
 1200V Trench + Field Stop technology
 low turn-off losses
 short tail current
 positive temperature coefficient
 easy paralleling
This chip is used for:
 power modules
Applications:
 drives
Chip Type
V_CE
I_C
SIGC32T120R3E 1200V 25A
Die Size
6.5 x 4.87 mm²
C
G
E
Package
sawn on foil
Mechanical Parameters
Raster size
Emitter pad size (incl. gate pad)
Gate pad size
Area total
Thickness
Wafer size
Max.possible chips per wafer
Passivation frontside
Pad metal
Backside metal
Die bond
Wire bond
Reject ink dot size
Recommended storage environment
6.5 x 4.87
3.4 x 4.992
1.139 x 1.139
mm²
31.6
140
µm
200
mm
842
Photoimide
3200 nm AlSiCu
Ni Ag –system
suitable for epoxy and soft solder die bonding
Electrically conductive glue or solder
Al, <500µm
 0.65mm ; max 1.2mm
Store in original container, in dry nitrogen, in dark
environment, < 6 month at an ambient temperature of 23°C
Edited by INFINEON Technologies, IFAG IPC TD VLS, L7641M, L7641T, L7641E, Rev 2.3, 27.06.2014