SIGC32T120R3 Datasheet, PDF (1/4 Pages) Infineon Technologies AG – IGBT3 Chip

IGBT³ Chip
SIGC32T120R3
FEATURES:
• 1200V Trench + Field Stop technology
• low turn-off losses
• short tail current
• positive temperature coefficient
• easy paralleling
This chip is used for:
• power module
Applications:
• drives
C
G
E
Chip Type
SIGC32T120R3
V_CE
I_Cn
Die Size
1200V 25A 6.5 x 4.87 mm²
Package Ordering Code
sawn on foil
Q67050-
A4104-A001
MECHANICAL PARAMETER:
Raster size
Emitter pad size
Gate pad size
Area total / active
Thickness
Wafer size
Flat position
Max.possible chips per wafer
Passivation frontside
Emitter metallization
Collector metallization
Die bond
Wire bond
Reject Ink Dot Size
Recommended Storage Environment
6.5 x 4.87
mm
3.4 x 4.992
1.139 x 1.139
31.6 / 21.5
mm²
140
µm
150
mm
180
grd
454 pcs
Photoimide
3200 nm AlSiCu
1400 nm Ni Ag –system
suitable for epoxy and soft solder die bonding
electrically conductive glue or solder
Al, <500µm
∅ 0.65mm ; max 1.2mm
store in original container, in dry nitrogen,
< 6 month at an ambient temperature of 23°C
Edited by INFINEON Technologies AI PS DD HV3, L7641A, Edition 2, 04.09.2003