SIGC25T120C Datasheet, PDF (1/4 Pages) Infineon Technologies AG – IGBT Chip in NPT-technology

IGBT Chip in NPT-technology
FEATURES:
• 1200V NPT technology
• 200µm chip
• positive temperature coefficient
• easy paralleling
SIGC25T120C
This chip is used for:
• BUP 213
Applications:
• drives
C
G
E
Chip Type
SIGC25T120C
V_CE
I_Cn
Die Size
1200V 15A 5.71 x 4.53 mm²
Package Ordering Code
sawn on foil
C67078-A4674-
A001
MECHANICAL PARAMETER:
Raster size
Emitter pad size
Gate pad size
Area total / active
Thickness
Wafer size
Flat position
Max.possible chips per wafer
Passivation frontside
Emitter metallization
Collector metallization
Die bond
Wire bond
Reject Ink Dot Size
Recommended Storage Environment
5.71 x 4.53
mm²
2 x ( 2.18 x 1.6 )
1.09 x 0.68
25.9 / 18.7
180
µm
150
mm
270
grd
555 pcs
Photoimide
3200 nm Al Si 1%
1400 nm Ni Ag –system
suitable for epoxy and soft solder die bonding
electrically conductive glue or solder
Al, <500µm
∅ 0.65mm ; max 1.2mm
store in original container, in dry nitrogen,
< 6 month at an ambient temperature of 23°C
Edited by INFINEON Technologies AI PS DD HV3, L 7141-M, Edition 2, 03.09.2003