SIGC223T120R2CL Datasheet, PDF (1/4 Pages) Infineon Technologies AG – IGBT Chip in NPT-technology

IGBT Chip in NPT-technology
FEATURES:
• 1200V NPT technology
• 180µm chip
• short circuit prove
• positive temperature coefficient
• easy paralleling
SIGC223T120R2CL
This chip is used for:
• IGBT-Modules
BSM150GB120DLC
Applications:
• drives
C
G
E
Chip Type
V_CE
I_Cn
Die Size
SIGC223T120R2CL _{1200V 150A 14.4 x 15.5 mm}²
Package Ordering Code
sawn on foil
Q67050-A4286-
A101
MECHANICAL PARAMETER:
Raster size
Area total / active
Emitter pad size
Gate pad size
Thickness
Wafer size
Flat position
Max.possible chips per wafer
Passivation frontside
Emitter metalization
Collector metalization
Die bond
Wire bond
Reject Ink Dot Size
Recommended Storage Environment
14.4 x 15.5
mm²
223.2 / 189.9
8x( 3.67x6.77 )
1.49 x 1.51
180
µm
150
mm
90
deg
54 pcs
Photoimide
3200 nm Al Si 1%
1400 nm Ni Ag –system
suitable for epoxy and soft solder die bonding
electrically conductive glue or solder
Al, ≤500µm
∅ 0.65mm ; max 1.2mm
store in original container, in dry nitrogen,
< 6 month at an ambient temperature of 23°C
Edited by INFINEON Technologies AI PS DD HV3, L 7121-P, Edition 2, 03.09.2003