SIGC20T120LE Datasheet, PDF (1/5 Pages) Infineon Technologies AG – positive temperature coefficient

SIGC20T120LE
IGBT3 Power Chip
Features:
 1200V Trench & Field Stop technology
 low turn-off losses
 short tail current
 positive temperature coefficient
 easy paralleling
This chip is used for:
 power modules
Applications:
 drives
Chip Type
SIGC20T120LE
V_CE
I_C
1200V 15A
Die Size
4.41 x 4.47 mm²
C
G
E
Package
sawn on foil
Mechanical Parameters
Raster size
Emitter pad size
Gate pad size
Area total
Thickness
Wafer size
Max.possible chips per wafer
Passivation frontside
Pad metal
Backside metal
Die bond
Wire bond
Reject ink dot size
Recommended storage environment
4.41 x 4.47
2.901 x 2.995
1.107 x 0.702
mm²
19.71
120
µm
200
mm
1381
Photoimide
3200 nm AlSiCu
Ni Ag –system
suitable for epoxy and soft solder die bonding
Electrically conductive glue or solder
Al, <500µm
 0.65mm ; max 1.2mm
Store in original container, in dry nitrogen, in dark
environment, < 6 month at an ambient temperature of 23°C
Edited by INFINEON Technologies, IFAG IPC TD VLS, L7631N, L7631U, L7631F, Rev 2.1, 27.06.2014