SIGC20T120L Datasheet, PDF (1/4 Pages) Infineon Technologies AG – IGBT3 Chip

IGBT³ Chip
SIGC20T120L
FEATURES:
• 1200V Trench + Field Stop technology
• 120µm chip
• low turn-off losses
• short tail current
• positive temperature coefficient
• easy paralleling
This chip is used for:
• power module
Applications:
• drives
C
G
E
Chip Type
SIGC20T120L
V_CE
I_Cn
Die Size
1200V 15A 4.41 x 4.47 mm²
Package Ordering Code
sawn on foil
Q67050-
A4268-A101
MECHANICAL PARAMETER:
Raster size
Emitter pad size
Gate pad size
Area total / active
Thickness
Wafer size
Flat position
Max.possible chips per wafer
Passivation frontside
Emitter metallization
Collector metallization
Die bond
Wire bond
Reject Ink Dot Size
Recommended Storage Environment
4.41 x 4.47
mm
2.99 x 2.9
1.1 x 0.7
19.7 / 12.8
mm²
120
µm
150
mm
0
grd
748 pcs
Photoimide
3200 nm AlSiCu
1400 nm Ni Ag –system
suitable for epoxy and soft solder die bonding
electrically conductive glue or solder
Al, <500µm
∅ 0.65mm ; max 1.2mm
store in original container, in dry nitrogen,
< 6 month at an ambient temperature of 23°C
Edited by INFINEON Technologies AI PS DD HV3, L7631B, Edition 2, 04.09.03