SIGC185T170R2C Datasheet, PDF (1/4 Pages) Infineon Technologies AG – IGBT Chip in NPT-technology

IGBT Chip in NPT-technology
FEATURES:
• 1700V NPT technology
• 280µm chip
• short circuit prove
• positive temperature coefficient
• easy paralleling
SIGC185T170R2C
C
This chip is used for:
• IGBT-Module BSM100GB170DL
Applications:
• drives
G
E
Chip Type
SIGC185T170R2C
V_CE
I_Cn
Die Size
Package Ordering Code
1700V 100A
13.56 x 13.56 mm²
sawn on foil
Q67041-A4697-
A001
MECHANICAL PARAMETER:
Raster size
Area total / active
Emitter pad size
Gate pad size
Thickness
Wafer size
Flat position
Max.possible chips per wafer
Passivation frontside
Emitter metalization
Collector metalization
Die bond
Wire bond
Reject Ink Dot Size
Recommended Storage Environment
13.56 x 13.56
mm²
183.87 / 141.6
8 x ( 2.38x3.98 )
0.757 x 1.48
280
µm
150
mm
90
deg
72 pcs
Photoimide
3200 nm Al Si 1%
1400 nm Ni Ag –system
suitable for epoxy and soft solder die bonding
Electrically conductive glue or solder
Al, ≤500µm
∅ 0.65mm ; max 1.2mm
store in original container, in dry nitrogen,
< 6 month at an ambient temperature of 23°C
Edited by INFINEON Technologies AI PS DD HV3, L 7371M, Edition 2, 04.09.2003