SIGC16T120CS Datasheet, PDF (1/4 Pages) Infineon Technologies AG – IGBT Chip in NPT-technology

IGBT Chip in NPT-technology
FEATURES:
• 1200V NPT technology
• 180µm chip
• short circuit prove
• positive temperature coefficient
• easy paralleling
SIGC16T120CS
This chip is used for:
• SGP07N120
Applications:
• drives, SMPS, resonant
applications
C
G
E
Chip Type
SIGC16T120CS
V_CE
I_Cn
1200V 8A
Die Size
4.04 x 4 mm²
Package Ordering Code
sawn on foil Q67050-A4113
MECHANICAL PARAMETER:
Raster size
Area total / active
Emitter pad size
Gate pad size
Thickness
Wafer size
Flat position
Max.possible chips per wafer
Passivation frontside
Emitter metalization
Collector metalization
Die bond
Wire bond
Reject Ink Dot Size
Recommended Storage Environment
4.04 x 4
mm²
16.16 / 10.4
1.88x2.18
0.71x1.08
200
µm
150
mm
0
deg
898 pcs
Photoimide
3200 nm Al Si 1%
1400 nm Ni Ag –system
suitable for epoxy and soft solder die bonding
electrically conductive glue or solder
Al, ≤500µm
∅ 0.65mm ; max 1.2mm
store in original container, in dry nitrogen,
< 6 month at an ambient temperature of 23°C
Edited by INFINEON Technologies AI PS DD HV3, L 7131-S, Edition 2, 03.09.2003