|
SIGC15T60S Datasheet, PDF (1/4 Pages) Infineon Technologies AG – IGBT3 Chip 600V Trench & Field Stop technology positive temperature coefficient | |||
|
IGBT3 Chip
SIGC15T60S
FEATURES:
⢠600V Trench & Field Stop technology
⢠low VCE(sat)
⢠low turn-off losses
⢠short tail current
⢠positive temperature coefficient
⢠easy paralleling
This chip is used for:
⢠power module
⢠discrete components
Applications:
⢠drives
⢠white goods
⢠resonant applications
C
G
E
Chip Type
SIGC15T60S
VCE
ICn
Die Size
600V 30A 3.92 x 3.88 mm2
Package Ordering Code
sawn on foil
Q67050-
A4393-A101
MECHANICAL PARAMETER:
Raster size
Emitter pad size
Gate pad size
Area total / active
Thickness
Wafer size
Flat position
Max. possible chips per wafer
Passivation frontside
Emitter metallization
Collector metallization
Die bond
Wire bond
Reject ink dot size
Recommended storage environment
3.92 x 3.88
3.154 x 3.154
mm2
0.608 x 1.083
15.2 / 10.7
mm2
70
µm
150
mm
0
deg
890 pcs
Photoimide
3200 nm AlSiCu
1400 nm Ni Ag âsystem
suitable for epoxy and soft solder die bonding
electrically conductive glue or solder
Al, <500µm
â
0.65mm ; max 1.2mm
store in original container, in dry nitrogen,
< 6 month at an ambient temperature of 23°C
Edited by INFINEON Technologies AI PS DD CLS, L7551D, Edition 2, 26.01.2005
|
▷ |