SIGC156T120R2CQ Datasheet, PDF (1/4 Pages) Infineon Technologies AG – IGBT Chip in Fieldstop-technology

SIGC156T120R2CQ
IGBT Chip in Fieldstop-technology
FEATURES:
• 1200V Fieldstop technology 120µm chip This chip is used for:
C
• low turn-off losses
• IGBT Modules
• short tail current
• positive temperature coefficient
• integrated gate resistor
Applications:
G
• SMPS, resonant applications
E
Chip Type
V_CE
I_Cn
Die Size
Package Ordering Code
SIGC156T120R2CQ 1200V 100A 12.59 X 12.59 mm² sawn on foil SP0000-83655
MECHANICAL PARAMETER:
Raster size
Emitter pad size
Gate pad size
Area total / active
Thickness
Wafer size
Flat position
Max.possible chips per wafer
Passivation frontside
Emitter metallization
Collector metallization
Die bond
Wire bond
Reject Ink Dot Size
Recommended Storage Environment
12.59 X 12.59
mm²
8 x (3.98 x 2.38)
1.46 x 0.8
158.5 / 132.6
120
µm
150
mm
90
grd
82 pcs
Photoimide
3200 nm Al Si Cu
1400 nm Ni Ag –system
suitable for epoxy and soft solder die bonding
electrically conductive glue or solder
Al, <500µm
∅ 0.65mm ; max 1.2mm
store in original container, in dry nitrogen,
< 6 month at an ambient temperature of 23°C
Edited by INFINEON Technologies AI PS DD HV3, L7181Q, 02.06.2005, Edition 1.0