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SIGC156T120R2C Datasheet, PDF (1/4 Pages) Infineon Technologies AG – IGBT Chip in NPT-technology | |||
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IGBT Chip in NPT-technology
FEATURES:
⢠1200V NPT technology 200µm chip
⢠low turn-off losses
⢠short tail current
⢠positive temperature coefficient
⢠easy paralleling
⢠integrated gate resistor
SIGC156T120R2C
This chip is used for:
⢠power module
BSM100GD120DN2
Applications:
⢠drives
C
G
E
Chip Type
VCE
ICn
Die Size
Package Ordering Code
SIGC156T120R2C 1200V 100A 12.59 X 12.59 mm2 sawn on foil
Q67041-
A4661-A003
MECHANICAL PARAMETER:
Raster size
Emitter pad size
Gate pad size
Area total / active
Thickness
Wafer size
Flat position
Max.possible chips per wafer
Passivation frontside
Emitter metallization
Collector metallization
Die bond
Wire bond
Reject Ink Dot Size
Recommended Storage Environment
12.59 X 12.59
mm2
8 x ( 3.98 x 2.38 )
1.46 x 0.8
158.5 / 132.6
200
µm
150
mm
90
grd
82 pcs
Photoimide
3200 nm Al Si 1%
1400 nm Ni Ag âsystem
suitable for epoxy and soft solder die bonding
electrically conductive glue or solder
Al, <500µm
â
0.65mm ; max 1.2mm
store in original container, in dry nitrogen,
< 6 month at an ambient temperature of 23°C
Edited by INFINEON Technologies AI PS DD HV3, L 7181-M, Edition 2, 03.09.2003
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