SIGC14T60NC Datasheet, PDF (1/4 Pages) Infineon Technologies AG – IGBT Chip in NPT-technology

IGBT Chip in NPT-technology
FEATURES:
• 600V NPT technology
• 100µm chip
• positive temperature coefficient
• easy paralleling
SIGC14T60NC
This chip is used for:
• IGBT Modules
Applications:
• drives
C
G
E
Chip Type
SIGC14T60NC
V_CE
I_Cn
Die Size
600V 15A
3.8 x 3.8 mm²
Package Ordering Code
sawn on foil
Q67050-A4135-
A001
MECHANICAL PARAMETER:
Raster size
Area total / active
Emitter pad size
Gate pad size
Thicknes s
Wafer size
Flat position
Max.possible chips per wafer
Passivation frontside
Emitter metallization
Collector metallization
Die bond
Wire bond
Reject Ink Dot Size
Recommended Storage Environment
3.8 x 3.8
mm²
14.44 / 10.7
1.89 x 2.19
0.7 x 1.09
100
µm
150
mm
0
deg
1032
Photoimide
3200 nm Al Si 1%
1400 nm Ni Ag –system
suitable for epoxy and soft solder die bonding
electrically conductive glue or solder
Al, ≤500µm
∅ 0.65mm ; max 1.2mm
store in original container, in dry nitrogen,
< 6 month at an ambient temperature of 23°C
Edited by INFINEON Technologies AI PS DD HV3, L 7232-M, Edition 2, 28.11.2003