SIGC144T170R2C_09 Datasheet, PDF (1/5 Pages) Infineon Technologies AG – IGBT Chip in NPT-technology 1700V NPT technology 280 μm chip

SIGC144T170R2C
IGBT Chip in NPT-technology
Features:
• 1700V NPT technology
• 280 µm chip
• short circuit prove
• positive temperature coefficient
• easy paralleling
This chip is used for:
• chip only
Applications:
• drives
Chip Type
V_CE
I_C
Die Size
SIGC144T170R2C 1700V 75A 11.98 x 11.98 mm²
C
G
E
Package
sawn on foil
Mechanical Parameter
Raster size
Emitter pad size
Gate pad size
Area total
Thickness
Wafer size
Max.possible chips per wafer
Passivation frontside
Pad metal
Backside metal
Die bond
Wire bond
Reject ink dot size
Recommended storage environment
11.98 x 11.98
8x ( 2.98x1.98 )
1.48 x 0.757
mm²
143.52
280
µm
150
mm
93 pcs
Photoimide
3200 nm AlSiCu
Ni Ag –system
suitable for epoxy and soft solder die bonding
Electrically conductive glue or solder
Al, <500µm
∅ 0.65mm ; max 1.2mm
Store in original container, in dry nitrogen, in dark
environment, < 6 month at an ambient temperature of 23°C
Edited by INFINEON Technologies, AIM IMM, L7361M, Edition 2.1, 11.11.2009