SIGC12T60SNC Datasheet, PDF (1/4 Pages) Infineon Technologies AG – IGBT Chip in NPT-technology 600V NPT technology positive temperature coefficient

IGBT Chip in NPT-technology
FEATURES:
• 600V NPT technology
• 100µm chip
• short circuit prove
• positive temperature coefficient
• easy paralleling
SIGC12T60SNC
This chip is used for:
• SGP10N60
Applications:
• drives
C
G
E
Chip Type
SIGC12T60SNC
SIGC12T60SNC
V_CE
I_Cn
Die Size
600V 10A
3.5 x 3.5 mm²
600V 10A
3.5 x 3.5 mm²
Package Ordering Code
sawn on foil
unsawn
Q67041-A4664-
A001
Q67041-A4664-
A002
MECHANICAL PARAMETER:
Raster size
Area total / active
Emitter pad size
Gate pad size
Thickness
Wafer size
Flat position
Max.possible chips per wafer
Passivation frontside
Emitter metallization
Collector metallization
Die bond
Wire bond
Reject Ink Dot Size
Recommended Storage Environment
3.5 x 3.5
mm²
12.25 / 8.7
1.99 x 1.58
1.1 x 0.694
100
µm
150
mm
270
deg
1219
Photoimide
3200 nm Al Si 1%
1400 nm Ni Ag –system
suitable for epoxy and soft solder die bonding
electrically conductive glue or solder
Al, ≤500µm
∅ 0.65mm ; max 1.2mm
store in original container, in dry nitrogen,
< 6 month at an ambient temperature of 23°C
Edited by INFINEON Technologies AI PS DD HV3, L 7222-S, Edition 2, 28.11.2003