SIGC12T120LE Datasheet, PDF (1/5 Pages) Infineon Technologies AG – positive temperature coefficient

SIGC12T120LE
IGBT3 Power Chip
Features:
 1200V Trench + Field Stop technology
 low turn-off losses
 short tail current
 positive temperature coefficient
 easy paralleling
This chip is used for:
 power module
Applications:
 drives
C
G
E
Chip Type
V_CE
I_Cn
SIGC12T120LE 1200V 8A
Die Size
3.54 x 3.5 mm²
Package
sawn on foil
MECHANICAL PARAMETER
Raster size
Emitter pad size (incl. gate pad)
Gate pad size
Area total / active
Thickness
Wafer size
Max.possible chips per wafer
Passivation frontside
Pad metal
Backside metal
Die bond
Wire bond
Reject ink dot size
Recommended storage environment
3.54 x 3.5
2.028 x 2.028
1.107 x 0.702
mm²
12.39 / 6.82
120
µm
200
mm
2243 pcs
Photoimide
3200 nm AlSiCu
Ni Ag –system
suitable for epoxy and soft solder die bonding
Electrically conductive glue or solder
Al, <500µm
 0.65mm ; max 1.2mm
Store in original container, in dry nitrogen,
< 6 month at an ambient temperature of 23°C
Edited by INFINEON Technologies, IFAG IPC TD VLS, L7621N, L7621U, L7621F, Rev 1.0, 27.06.2014