SIGC12T120E Datasheet, PDF (1/5 Pages) Infineon Technologies AG – low turn-off losses

SIGC12T120E
IGBT3 Power Chip
Features:
 1200V Trench + Field Stop technology
 low turn-off losses
 short tail current
 positive temperature coefficient
 easy paralleling
This chip is used for:
 power modules
Applications:
 drives
Chip Type
SIGC12T120E
V_CE
I_C
1200V 8A
Die Size
3.54 x 3.5 mm²
C
G
E
Package
sawn on foil
Mechanical Parameters
Raster size
Emitter pad size (incl. gate pad)
Gate pad size
Area total
Thickness
Wafer size
Max.possible chips per wafer
Passivation frontside
Pad metal
Backside metal
Die bond
Wire bond
Reject ink dot size
Recommended storage environment
3.54 x 3.5
2.028 x 2.028
1.107 x 0.702
mm²
12.4
140
µm
200
mm
2213
Photoimide
3200 nm AlSiCu
Ni Ag –system
suitable for epoxy and soft solder die bonding
Electrically conductive glue or solder
Al, <500µm
 0.65mm ; max 1.2mm
Store in original container, in dry nitrogen, in dark
environment, < 6 month at an ambient temperature of 23°C
Edited by INFINEON Technologies, IFAG IPC TD VLS, L7621M, L7621T, L7621E, Rev 2.3, 27.06.2014