SIGC121T60NR2C Datasheet, PDF (1/4 Pages) Infineon Technologies AG – IGBT Chip in NPT-technology

IGBT Chip in NPT-technology
FEATURES:
• 600V NPT technology 100µm chip
• positive temperature coefficient
• easy paralleling
• integrated gate resistor
SIGC121T60NR2C
This chip is used for:
• IGBT Modules
Applications:
• drives
C
G
E
Chip Type
V_CE
I_Cn
Die Size
SIGC121T60NR2C 600V 150A
11 x 11 mm²
Package Ordering Code
sawn on foil
Q67041-A4684-
A001
MECHANICAL PARAMETER:
Raster size
Area total / active
Emitter pad size
Gate pad size
Thickness
Wafer size
Flat position
Max.possible chips per wafer
Passivation frontside
Emitter metallization
Collector metallization
Die bond
Wire bond
Reject Ink Dot Size
Recommended Storage Environment
11 x 11
mm²
121 / 102.5
8 x 6.2 x 2.55
1.51 x 0.8
100
µm
150
mm
90
grd
106
Photoimide
3200 nm Al Si 1%
1200 nm Ni Ag –system
suitable for epoxy and soft solder die bonding
electrically conductive glue or solder
Al, <500µm
∅ 0.65mm ; max 1.2mm
store in original container, in dry nitrogen,
< 6 month at an ambient temperature of 23°C
Edited by INFINEON Technologies AI PS DD HV3, L 7292-M, Edition 2, 28.11.2003