SIGC121T120R2CL Datasheet, PDF (1/4 Pages) Infineon Technologies AG – IGBT Chip in NPT-technology

IGBT Chip in NPT-technology
FEATURES:
• 1200V NPT technology
• 180µm chip
• low turn-off losses
• positive temperature coefficient
• easy paralleling
• integrated gate resistor
SIGC121T120R2CL
This chip is used for:
• power module
BSM75GD120DLC
Applications:
• drives
C
G
E
Chip Type
V_CE
I_Cn
Die Size
Package Ordering Code
SIGC121T120R2CL 1200V 75A 11.08 X 11.08 mm² sawn on foil
Q67041-
A4686-A003
MECHANICAL PARAMETER:
Raster size
Emitter pad size
Gate pad size
Area total / active
Thickness
Wafer size
Flat position
Max.possible chips per wafer
Passivation frontside
Emitter metallization
Collector metallization
Die bond
Wire bond
Reject Ink Dot Size
Recommended Storage Environment
11.08 X 11.08
mm²
8 x ( 2.99 x 1.97 )
1.46 x 0.8
122.8 / 99.6
180
µm
150
mm
90
grd
104 pcs
Photoimide
3200 nm Al Si 1%
1400 nm Ni Ag –system
suitable for epoxy and soft solder die bonding
electrically conductive glue or solder
Al, <500µm
∅ 0.65mm ; max 1.2mm
store in original container, in dry nitrogen,
< 6 month at an ambient temperature of 23°C
Edited by INFINEON Technologies AI PS DD HV3, L 7171-P, Edition 2, 03.09.2003