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SIGC10T60S Datasheet, PDF (1/4 Pages) Infineon Technologies AG – IGBT3 Chip 600V Trench & Field Stop technology positive temperature coefficient | |||
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IGBT3 Chip
SIGC10T60S
FEATURES:
⢠600V Trench & Field Stop technology
⢠low VCE(sat)
⢠low turn-off losses
⢠short tail current
⢠positive temperature coefficient
⢠easy paralleling
This chip is used for:
⢠power module
⢠discrete components
Applications:
⢠drives
⢠white goods
⢠resonant applications
C
G
E
Chip Type
SIGC10T60S
VCE
ICn
Die Size
600V 20A 3.19 x 3.21 mm2
Package Ordering Code
sawn on foil
Q67050-
A4361-A101
MECHANICAL PARAMETER:
Raster size
Emitter pad size
Gate pad size
Area total / active
Thickness
Wafer size
Flat position
Max. possible chips per wafer
Passivation frontside
Emitter metallization
Collector metallization
Die bond
Wire bond
Reject ink dot size
Recommended storage environment
3.19 x 3.21
2.004 x 2.413
mm2
0.361 x 0.513
10.2 / 7.1
mm2
70
µm
150
mm
0
deg
1363 pcs
Photoimide
3200 nm AlSiCu
1400 nm Ni Ag âsystem
suitable for epoxy and soft solder die bonding
electrically conductive glue or solder
Al, <500µm
â
0.65mm ; max 1.2mm
store in original container, in dry nitrogen,
< 6 month at an ambient temperature of 23°C
Edited by INFINEON Technologies AI PS DD CLS, L7541D, Edition 2, 26.01.2005
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