SIGC100T60R3 Datasheet, PDF (1/4 Pages) Infineon Technologies AG – IGBT3 Chip

IGBT³ Chip
FEATURES:
• 600V Trench & Field Stop technology
• low V_CE(sat)
• low turn-off losses
• short tail current
• positive temperature coefficient
• easy paralleling
SIGC100T60R3
This chip is used for:
• power module
Applications:
• drives
C
G
E
Chip Type
SIGC100T60R3
V_CE
I_Cn
Die Size
Package Ordering Code
600V 200A
9.73 x 10.23 mm²
sawn on foil
Q67050-
A4345-A101
MECHANICAL PARAMETER:
Raster size
Emitter pad size
Gate pad size
Area total / active
Thickness
Wafer size
Flat position
Max. possible chips per wafer
Passivation frontside
Emitter metallization
Collector metallization
Die bond
Wire bond
Reject ink dot size
Recommended storage environment
9.73 x 10.23
( 4.256 x 1.938 ) x 4
( 4.256 x 2.356 ) x 4
1.615 x 0.817
99.5 / 80.1
mm²
mm²
70
µm
150
mm
90
deg
121 pcs
Photoimide
3200 nm AlSiCu
1400 nm Ni Ag –system
suitable for epoxy and soft solder die bonding
electrically conductive glue or solder
Al, <500µm
∅ 0.65mm ; max 1.2mm
store in original container, in dry nitrogen,
< 6 month at an ambient temperature of 23°C
Edited by INFINEON Technologies AI PS DD CLS, L7601A, Edition 2, 27.01.2005