SIGC07T60UN Datasheet, PDF (1/4 Pages) Infineon Technologies AG – High Speed IGBT Chip in NPT-technology positive temperature coefficient

SIGC07T60UN
High Speed IGBT Chip in NPT-technology
FEATURES:
• low Eoff
• 600V NPT technology
• 100µm chip
• short circuit prove
• positive temperature coefficient
• easy paralleling
This chip is used for:
• SKB06N60HS
Applications:
• Welding
• PFC
• UPS
C
G
E
Chip Type
SIGC07T60UN
V_CE
I_Cn
600V 6A
Die Size
2.6 x 2.6 mm²
Package Ordering Code
sawn on foil
Q67050-A4220-
A101
MECHANICAL PARAMETER:
Raster size
Area total / active
Emitter pad size
Gate pad size
Thickness
Wafer size
Flat position
Max.possible chips per wafer
Passivation frontside
Emitter metallization
Collector metallization
Die bond
Wire bond
Reject Ink Dot Size
Recommended Storage Environment
2.6 x 2.6
mm²
6.8 / 4.1
1.78 x 1.1
0.499 x 0.699
100
µm
150
mm
180
deg
2292
Photoimide
3200 nm Al Si 1%
1400 nm Ni Ag –system
suitable for epoxy and soft solder die bonding
electrically conductive glue or solder
Al, ≤500µm
∅ 0.65mm ; max 1.2mm
store in original container, in dry nitrogen,
< 6 month at an ambient temperature of 23°C
Edited by INFINEON Technologies AI PS DD HV3, L 7212U, Edition 2, 28.11.2003