SIGC04T60GS Datasheet, PDF (1/4 Pages) Infineon Technologies AG – IGBT3 Chip 600V Trench & Field Stop technology positive temperature coefficient

IGBT³ Chip
SIGC04T60GS
FEATURES:
• 600V Trench & Field Stop technology
• low V_CE(sat)
• low turn-off losses
• short tail current
• positive temperature coefficient
• easy paralleling
This chip is used for:
• power module
• discrete components
Applications:
• drives
• white goods
• resonant applications
C
G
E
Chip Type
SIGC04T60GS
V_CE
I_Cn
600V 6A
Die Size
1.98 x 2.17 mm²
Package Ordering Code
sawn on foil
Q67050-
A4332-A101
MECHANICAL PARAMETER:
Raster size
Emitter pad size
Gate pad size
Area total / active
Thickness
Wafer size
Flat position
Max. possible chips per wafer
Passivation frontside
Emitter metallization
Collector metallization
Die bond
Wire bond
Reject ink dot size
Recommended storage environment
1.98 x 2.17
1.007 x 1.33
mm²
0.361 x 0.513
4.1 / 2.15
mm²
70
µm
150
mm
270
deg
3659 pcs
Photoimide
3200 nm AlSiCu
1400 nm Ni Ag –system
suitable for epoxy and soft solder die bonding
electrically conductive glue or solder
Al, <500µm
∅ 0.65mm ; max 1.2mm
store in original container, in dry nitrogen,
< 6 month at an ambient temperature of 23°C
Edited by INFINEON Technologies AI PS DD CLS, L7501D, Edition 1, 08.06.2004