SIDC81D120E6 Datasheet, PDF (1/4 Pages) Infineon Technologies AG – Fast switching diode chip in EMCON-Technology

Preliminary
SIDC81D120E6
Fast switching diode chip in EMCON-Technology
FEATURES:
• 1200V EMCON technology 130 µm chip
• soft, fast switching
This chip is used for:
• EUPEC power modules and
discrete devices
A
• low reverse recovery charge
• small temperature coefficient
Applications:
C
• SMPS, resonant applications,
drives
Chip Type
SIDC81D120E6
V_R
I_F
Die Size
1200V 100A
9 x 9 mm²
Package Ordering Code
sawn on foil
Q67050-A4128-
A001
MECHANICAL PARAMETER:
Raster size
Area total / active
Anode pad size
Thickness
Wafer size
Flat position
Max. possible chips per wafer
Passivation frontside
Anode metallisation
Cathode metallisation
Die bond
Wire bond
Reject Ink Dot Size
Recommended Storage Environment
9x9
81 / 69.39
mm²
8.28 x 8.28
130
µm
150
mm
180
deg
169 pcs
Photoimide
3200 nm AlSiCu
1400 nm Ni Ag –system
suitable for epoxy and soft solder die bonding
electrically conductive glue or solder
Al, ≤500µm
∅ 0.65mm ; max 1.2mm
store in original container, in dry nitrogen,
< 6 month at an ambient temperature of 23°C
Edited by INFINEON Technologies AI PS DD HV3, L 4202P, Edition 1, 8.01.2002