SIDC59D170H_04 Datasheet, PDF (1/4 Pages) Infineon Technologies AG – Fast switching diode chip in EMCON 3 -Technology

SIDC59D170H
Fast switching diode chip in EMCON 3 -Technology
FEATURES:
A
• 1700V EMCON 3 technology 200 µm chip This chip is used for:
• soft, fast switching
• EUPEC power modules
• low reverse recovery charge
• small temperature coefficient
Applications:
C
• resonant applications, drives
Chip Type
SIDC59D170H
V_R
I_F
Die Size
1700V 100A 7.7 x 7.7 mm²
Package Ordering Code
sawn on foil
Q67050-A4176-
A001
MECHANICAL PARAMETER:
Raster size
Area total / active
Anode pad size
Thickness
Wafer size
Flat position
Max. possible chips per wafer
Passivation frontside
Anode metallization
Cathode metallization
Die bond
Wire bond
Reject Ink Dot Size
Recommended Storage Environment
7.7 x 7.7
59.29 / 45.35
mm²
5.68 x 5.68
200
µm
150
mm
180
deg
238 pcs
Photoimide
3200 nm Al Si Cu
Ni Ag –system
suitable for epoxy and soft solder die bonding
electrically conductive glue or solder
Al, ≤500µm
∅ 0.65mm; max 1.2mm
store in original container, in dry nitrogen,
< 6 month at an ambient temperature of 23°C
Edited by INFINEON Technologies AI DP PSD CLS, L 4481A, Edition 2, 2.11.2004