SIDC42D170E6_08 Datasheet, PDF (1/4 Pages) Infineon Technologies AG – Fast switching diode chip in Emitter Controlled -Technology

SIDC42D170E6
Fast switching diode chip in Emitter Controlled -Technology
A
Features:
This chip is used for:
• 1700V technology, Emitter Controlled
• soft, fast switching
• power modules and discrete
devices
• low reverse recovery charge
• small temperature coefficient
Applications:
• SMPS, resonant applications,
C
drives
Chip Type
SIDC42D170E6
V_R
I_F
1700V 50A
Die Size
6.5 x 6.5 mm²
Package
sawn on foil
Mechanical Parameter
Raster size
Area total
Anode pad size
Thickness
Wafer size
Max. possible chips per wafer
Passivation frontside
Pad metal
Backside metal
Die bond
Wire bond
Reject ink dot size
Recommended storage environment
6.5 x 6.5
42.25
mm ²
4.48 x 4.48
200
µm
150
mm
339
Photoimide
3200 nm AlSiCu
Ni Ag –system
suitable for epoxy and soft solder die bonding
Electrically conductive glue or solder
Al, ≤500µm
∅ 0.65mm; max 1.2mm
Store in original container, in dry nitrogen,in dark
environment, < 6 month at an ambient temperature of 23°C
Edited by INFINEON Technologies, AIM PMD D CID CLS, L4241N, Edition 1.2, 28.0 7.2008