SIDC24D60SIC3 Datasheet, PDF (1/4 Pages) Infineon Technologies AG – Silicon Carbide Schottky Diode

SIDC24D60SIC3
Silicon Carbide Schottky Diode
FEATURES:
Applications:
A
• Revolutionary semiconductor material -
• SMPS, PFC, snubber
Silicon Carbide
• Switching behavior benchmark
C
• No reverse recovery
• No temperature influence on the switching
behavior
• No forward recovery
Chip Type
SIDC24D60SIC3
V_BR I_F
600V 8A
Die Size
Package Ordering Code
1.706 x 1.38 mm²
sawn on foil
Q67050-A4281-
A101
MECHANICAL PARAMETER:
Raster size
Anode pad size
Area total / active
Thickness
Wafer size
Flat position
Max. possible chips per wafer
Passivation frontside
Anode metalization
Cathode metalization
Die bond
Wire bond
Reject Ink Dot Size
Recommended Storage Environment
1.706x 1.38
1.405 x 1.08
2.354 / 1.548
mm
mm²
355
µm
75
mm
0
deg
1649 pcs
Photoimide
3200 nm Al
1400 nm Ni Ag –system
suitable for epoxy and soft solder die bonding
Electrically conductive glue or solder
Al, ≤ 350µm
∅ ≥ 0.3 mm
store in original container, in dry nitrogen,
< 6 month at an ambient temperature of 23°C
Edited by INFINEON Technologies, AI PS DD HV3, Edition 1, 22.04.2004