SIDC11D60SIC3 Datasheet, PDF (1/4 Pages) Infineon Technologies AG – Silicon Carbide Schottky Diode

SIDC11D60SIC3
Silicon Carbide Schottky Diode
FEATURES:
Applications:
A
• Worlds first 600V Schottky diode
• SMPS, PFC, snubber
• Revolutionary semiconductor material -
Silicon Carbide
• Switching behavior benchmark
C
• No reverse recovery
• No temperature influence on the switching
behavior
• Ideal diode for Power Factor Correction
• No forward recovery
Chip Type
SIDC11D60SIC3
V_BR I_F
600V 4A
Die Size
1.15 x 0.97 mm²
Package Ordering Code
sawn on foil
Q67050-A4161-
A104
MECHANICAL PARAMETER:
Raster size
Anode pad size
Area total / active
Thickness
Wafer size
Flat position
Max. possible chips per wafer
Passivation frontside
Anode metalization
Cathode metalization
Die bond
Wire bond
Reject Ink Dot Size
Recommended Storage Environment
1.15 x 0.97
0.85 x 0.67
1.116 / 0.581
mm
mm²
355
µm
75
mm
0
deg
3555 pcs
Photoimide
3200 nm Al
1400 nm Ni Ag –system
suitable for epoxy and soft solder die bonding
electrically conductive glue or solder
Al, ≤ 250µm
∅ ≥ 0.3 mm
store in original container, in dry nitrogen,
< 6 month at an ambient temperature of 23°C
Edited by INFINEON Technologies, AI PS DD HV3, Edition 1, 22.04.2004