SIDC112D170H Datasheet, PDF (1/4 Pages) Infineon Technologies AG – Fast switching diode

Fast switching diode
Features:
• 1700V technology, Emitter Controlled
Diode 3^th generation, 200 µm chip
• soft, fast switching
• low reverse recovery charge
• small temperature coefficient
SIDC112D170H
A
This chip is used for:
• power modules
C
Applications:
• resonant applications, drives
Chip Type
SIDC112D170H
V_R
I_F
1700V 205A
Die Size
11.8 x 9.52 mm²
Package
sawn on foil
Mechanical Parameters
Raster size
Area total
Anode pad size
Thickness
Wafer size
Max. possible chips per wafer
Passivation frontside
Pad metal
Backside metal
Die bond
Wire bond
Reject ink dot size
Recommended storage environment
11.8 x 9.52
112.3
mm²
9.78 x 7.5
200
µm
150
mm
114
Photoimide
3200 nm AlSiCu
Ni Ag –system
suitable for epoxy and soft solder die bonding
Electrically conductive glue or solder
Al, ≤500µm
∅ 0.65mm; max 1.2mm
Store in original container, in dry nitrogen, in dark
environment, < 6 month at an ambient temperature of 23°C
Edited by INFINEON Technologies, IMM PSD, L4502A, Edition 0.9, 22.02.2010