SIDC09D60F6_10 Datasheet, PDF (1/4 Pages) Infineon Technologies AG – Fast switching diode 600V Emitter Controlled technology 70 μm chip soft , fast switching

SIDC09D60F6
Fast switching diode
A
Features:
This chip is used for:
• 600V Emitter Controlled technology 70 µm • power modules and discrete
chip
devices
• soft , fast switching
C
• low reverse recovery charge
• small temperature coefficient
Applications:
• SMPS, resonant applications,
drives
Chip Type
SIDC09D60F6
V_R
I_F
600V 30A
Die Size
3 x 3 mm²
Package
sawn on foil
Mechanical Parameters
Raster size
Area total
Anode pad size
Thickness
Wafer size
Max. possible chips per wafer
Passivation frontside
Pad metal
Backside metal
Die bond
Wire bond
Reject ink dot size
Recommended storage environment
3x3
9
mm²
2.518 x 2.518
70
µm
150
mm
1667
Photoimide
3200 nm AlSiCu
Ni Ag –system
suitable for epoxy and soft solder die bonding
Electrically conductive glue or solder
Al, ≤250µm
∅ 0.65mm; max 1.2mm
Store in original container, in dry nitrogen, in dark
environment, < 6 month at an ambient temperature of 23°C
Edited by INFINEON Technologies, IMM PSD, L4304M, Edition 2.1, 09.03.2010