SGP02N120 Datasheet, PDF (1/12 Pages) Infineon Technologies AG – Fast S-IGBT in NPT-technology

Preliminary
SGP02N120
SGB02N120, SGD02N120
Fast S-IGBT in NPT-technology
• 40% lower E_off compared to previous generation
• Short circuit withstand time – 10 µs
• Designed for:
- Motor controls
- Inverter
- SMPS
• NPT-Technology offers:
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
- parallel switching capability
C
G
E
Type
SGP02N120
SGB02N120
SGD02N120
SGI02N120
V_CE
I_C
E_off
T_j
Package
Ordering Code
1200V 2A 0.11mJ 150°C TO-220AB
Q67040-S4270
TO-263AB(D2PAK) Q67040-S4271
TO-252AA(DPAK) Q67040-S4269
TO-262
Q67040-S4291
Maximum Ratings
Parameter
Collector-emitter voltage
DC collector current
T_C = 25°C
T_C = 100°C
Pulsed collector current, t_p limited by T_jmax
Turn off safe operating area
V_CE ≤ 1200V, T_j ≤ 150°C
Gate-emitter voltage
Avalanche energy, single pulse
I_C = 2A, V_CC = 50V, R_GE = 25Ω, start at T_j = 25°C
Short circuit withstand time¹⁾
V_GE = 15V, 100V ≤ V_CC ≤ 1200V, T_j ≤ 150°C
Power dissipation
T_C = 25°C
Operating junction and storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
Symbol
V_CE
I_C
I_Cpuls
-
V_GE
E_AS
t_SC
P_tot
T_j , T_stg
-
Value
Unit
1200
V
A
6.2
2.8
9.6
9.6
±20
V
10
mJ
10
µs
62
W
-55...+150
°C
260
1) _{Allowed number of short circuits: <1000; time between short circuits: >1s.}
Power Semiconductors
1
Mar-00