SGB30N60_09 Datasheet, PDF (1/11 Pages) Infineon Technologies AG – Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation

SGB30N60
Fast IGBT in NPT-technology
• 75% lower E_off compared to previous generation
combined with low conduction losses
• Short circuit withstand time – 10 µs
• Designed for:
- Motor controls
- Inverter
• NPT-Technology for 600V applications offers:
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
- parallel switching capability
C
G
E
PG-TO-263-3-2 (D²-PAK)
(TO-263AB)
• Qualified according to JEDEC¹ for target applications
• Pb-free lead plating; RoHS compliant
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Type
SGB30N60
V_CE
I_C
V_CE(sat)
T_j
Marking
Package
600V 30A
2.5V
150°C G30N60 PG-TO-263-3-2
Maximum Ratings
Parameter
Collector-emitter voltage
DC collector current
T_C = 25°C
T_C = 100°C
Pulsed collector current, t_p limited by T_jmax
Turn off safe operating area
V_CE ≤ 600V, T_j ≤ 150°C
Gate-emitter voltage
Avalanche energy, single pulse
I_C = 30 A, V_CC = 50 V, R_GE = 25 Ω ,
start at T_j = 25°C
Short circuit withstand time²
V_GE = 15V, V_CC ≤ 600V, T_j ≤ 150°C
Power dissipation
T_C = 25°C
Operating junction and storage temperature
Soldering temperature (reflow soldering, MSL1)
Symbol
V_CE
I_C
I_Cpuls
-
V_GE
E_AS
t_SC
P_tot
T_j , T_stg
Value
Unit
600
V
A
41
30
112
112
±20
V
165
mJ
10
µs
250
W
-55...+150
°C
260
1 _{J-STD-020 and JESD-022}
2 _{Allowed number of short circuits: <1000; time between short circuits: >1s.}
1
Rev. 2.3 05.03.2009