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SGB15N60_06 Datasheet, PDF (1/11 Pages) Infineon Technologies AG – Fast IGBT in NPT-technology | |||
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SGB15N60
Fast IGBT in NPT-technology
⢠75% lower Eoff compared to previous generation
combined with low conduction losses
⢠Short circuit withstand time â 10 µs
⢠Designed for:
- Motor controls
- Inverter
⢠NPT-Technology for 600V applications offers:
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
- parallel switching capability
PG-TO-263-3-2
⢠Qualified according to JEDEC1 for target applications
⢠Pb-free lead plating; RoHS compliant
⢠Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Type
SGB15N60
VCE
IC
VCE(sat)
Tj
Marking
Package
600V 15A
2.3V
150°C G15N60 PG-TO-263-3-2
C
G
E
Maximum Ratings
Parameter
Collector-emitter voltage
DC collector current
TC = 25°C
TC = 100°C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area
VCE ⤠600V, Tj ⤠150°C
Gate-emitter voltage
Avalanche energy, single pulse
IC = 15 A, VCC = 50 V, RGE = 25 ⦠,
start at Tj = 25°C
Short circuit withstand time2
VGE = 15V, VCC ⤠600V, Tj ⤠150°C
Power dissipation
TC = 25°C
Operating junction and storage temperature
Soldering temperature (reflow soldering, MSL1)
Symbol
VCE
IC
ICpuls
-
VGE
EAS
tSC
Ptot
Tj , Tstg
Value
Unit
600
V
A
31
15
62
62
±20
V
85
mJ
10
µs
139
W
-55...+150
°C
245
1 J-STD-020 and JESD-022
2 Allowed number of short circuits: <1000; time between short circuits: >1s.
1
Rev.2.3 Nov 06
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