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SGB02N60_06 Datasheet, PDF (1/11 Pages) Infineon Technologies AG – Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation | |||
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SGB02N60
Fast IGBT in NPT-technology
⢠75% lower Eoff compared to previous generation
combined with low conduction losses
⢠Short circuit withstand time â 10 µs
⢠Designed for:
- Motor controls
- Inverter
⢠NPT-Technology for 600V applications offers:
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
- parallel switching capability
⢠Qualified according to JEDEC2 for target applications
⢠Pb-free lead plating; RoHS compliant
⢠Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
C
G
E
PG-TO-263-3-2 (D²-PAK)
(TO-263AB)
Type
SGB02N60
VCE
600V
IC
VCE(sat)150°C
Tj
2A
2.2V
150°C
Marking
G02N60
Package
PG-TO-263-3-2
Maximum Ratings
Parameter
Collector-emitter voltage
DC collector current
TC = 25°C
TC = 100°C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area
VCE ⤠600V, Tj ⤠150°C
Gate-emitter voltage
Avalanche energy, single pulse
IC = 2 A, VCC = 50 V, RGE = 25 ⦠,
start at Tj = 25°C
Short circuit withstand time1)
VGE = 15V, VCC ⤠600V, Tj ⤠150°C
Power dissipation
TC = 25°C
Operating junction and storage temperature
Soldering temperature (reflow soldering, MSL1)
Symbol
VCE
IC
ICpuls
-
VGE
EAS
tSC
Ptot
Tj , Tstg
Value
Unit
600
V
A
6.0
2.9
12
12
±20
V
13
mJ
10
µs
30
W
-55...+150
°C
245
2 J-STD-020 and JESD-022
1) Allowed number of short circuits: <1000; time between short circuits: >1s.
1
Rev. 2.3 Nov 06
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