SGB02N120_07 Datasheet, PDF (1/11 Pages) Infineon Technologies AG – Fast IGBT in NPT-technology Lower Eoff compared to previous generation

SGB02N120
Fast IGBT in NPT-technology
• Lower E_off compared to previous generation
• Short circuit withstand time – 10 µs
• Designed for:
G
- Motor controls
- Inverter
- SMPS
• NPT-Technology offers:
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
- parallel switching capability
• Qualified according to JEDEC¹ for target applications
• Pb-free lead plating; RoHS compliant
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
C
E
PG-TO-263-3-2
Type
SGB02N120
V_CE
I_C
E_off
T_j
Marking
Package
1200V 2A 0.11mJ 150°C GB02N120 PG-TO-263-3-2
Maximum Ratings
Parameter
Collector-emitter voltage
DC collector current
T_C = 25°C
T_C = 100°C
Pulsed collector current, t_p limited by T_jmax
Turn off safe operating area
V_CE ≤ 1200V, T_j ≤ 150°C
Gate-emitter voltage
Avalanche energy, single pulse
I_C = 2A, V_CC = 50V, R_GE = 25Ω, start at T_j = 25°C
Short circuit withstand time²
V_GE = 15V, 100V ≤ V_CC ≤ 1200V, T_j ≤ 150°C
Power dissipation
T_C = 25°C
Operating junction and storage temperature
Soldering temperature (reflow soldering, MSL1)
Symbol
V_CE
I_C
I_Cpuls
-
V_GE
E_AS
t_SC
P_tot
T_j , T_stg
T_s
Value
Unit
1200
V
A
6.2
2.8
9.6
9.6
±20
V
10
mJ
10
µs
62
W
-55...+150
°C
245
1 _{J-STD-020 and JESD-022}
2 _{Allowed number of short circuits: <1000; time between short circuits: >1s.}
Power Semiconductors
1
Rev. 2_3 Jan 07